Effect of Oxygen Post Plasma Treatment on Characteristics of Electron Cyclotron Resonance CVD Fluorine-Doped Silicon Dioxide Films Using SiF4 and O2 Gas Sources

Journal of the Electrochemical Society

Volumn 146, Issue 2, 1999, Pages 697-701

  Lee, Seoghyeong ^a   Park, Jong Wan ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DENSIFICATION; DESORPTION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON CYCLOTRON RESONANCE; FLUORINE; ION BOMBARDMENT; OXYGEN; PERMITTIVITY; PLASMA APPLICATIONS; SEMICONDUCTOR DOPING; SILICA;

DIELECTRIC STABILITY; OXYGEN POST PLASMA TREATMENT;

DIELECTRIC FILMS;

EID: 0033075801     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391665     Document Type: Article

References (13)

1. R. K. Laxman, Semicond. Int., 18, 71 (1995).
2. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA (1997).
3. S. Lee and J.-W. Park, J. Appl. Phys., 80, 5260 (1996).
4. S. Lee and J.-W. Park, Mater. Res. Soi. Symp. Proc., 427, 427 (1996).
5. S. Lee, J.-Y. Yoo, and J.-W. Park, Mater. Res. Soc. Symp. Proc., 443, 119(1997).
6. T. Tamuro, Y. Inoue, M. Satoh, H. Yoshitaka, and J. Sakai, p. 631, in Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials (SSDM). Business Center for Academic Societies, Yokohama, Japan, Aug 26-29(1996).
7. S. Takeishi, H. Kudoh, R. Shinohara, A. Tsukune, Y. Satoh, H. Miyazawa, H. Harada, and M. Yamada, J. Electrochem. Soc., 143, 381 (1996).
8. N. Hayasaka, Y. Nishiyama, H. Miyajima, K. Tomioka, R. Nakata, and H. Okano, p. 163, Proceedings of the Symposium on Dry Process. Vol. 2, The Institute of Electrical Engineers of Japan, Tokyo, Tokyo, Japan, Nov 1-2 (1993).
9. M. Murakami and S. Matsushita, Semicond. Int., 19, 291 (1996).
10. P. W. Lee, S. Mizuno, A. Verma, H. Tran, and S. V. Nguyen, J. Electrochem. Soc., 143, 2015 (1996).
11. H. Miyajima, R. Katsumata, Y. Nakasaki, N. Hayasaka, and H. Okano, No. 95ISMIC-104, in Proceeding of the 12th International VLSI Multilevel Interconnection Conference, VMIC. Santa Clara, p. 391., (1995).
12. D. Carl, S. Schuchmann, M. Kilgore, R. Swope, and W. van den Heok, No. 95ISMIC-10, in Proceedings of the 12th International VLSI Muttilevel Interconnection Conference, VMIC, p. 97, Santa Clara, CA, June 27-29 (1995).
13. H. Kudo, R. Shinohara, S. Takeishi, N. Awaji, and M. Yamada, p. 605, Extended Abstracts of the 1995 International Conference on Solid-State Devices and Materials (SSDM), Business Center for Academic Societies. Yokohama, Japan, Aug. 21-24 (1995).