Characterization and investigation of the interaction between hot electron and electrostatic discharge stresses using NMOS devices in 0.13 μm CMOS technology

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 219-225

  Salman, A ^a   Gauthier, R ^a   Stadler, W ^a   Esmark, K ^a   Muhammad, M ^a   Putnam, C ^a   Ioannou, D ^a  

^a GEORGE MASON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC DISCHARGES; ELECTRON TUNNELING; ELECTROSTATICS; HOT CARRIERS; MOSFET DEVICES; RELIABILITY;

ELECTROSTATIC DISCHARGE STRESSES; SILICIDE BLOCKING;

INTEGRATED CIRCUIT TESTING;

EID: 0035017473     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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