SCOPUS 정보 검색 플랫폼

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 696-699

New findings on hot-carrier stress in large grain excimer annealed n-channel polysilicon TFTs

(6) Farmakis, F V a Brini, J a Kamarinos, G a Angelis, C T b Dimitriadis, C A b Miyasaka, M c

a Grenoble INP Phelma (France)

b ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

c SEIKO EPSON CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; HOT CARRIERS; POLYSILICON;

ANALYTICAL STUDIES; DEVICE DEGRADATION; EXCIMER LASER ANNEALED; HOT CARRIER STRESS; LARGE GRAIN SIZES; LARGE-GRAIN; NONUNIFORMITY; POLYCRYSTALLINE THIN FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 84907900780 PISSN: 19308876 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (5)

References (8)

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2
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3
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4
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- May
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- Miyasaka, M.¹ Stoemenos, J.²

5
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6
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7
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8
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- Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFT's
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