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Volumn 11, Issue 3, 2001, Pages

Electron-impact silane dissociation and deposition rate relationship in the PECVD of microcrystalline silicon thin films

(3) Amanatides, E a Rapakoulias, D E a Mataras, D a

a UNIVERSITY OF PATRAS (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTALLINE MATERIALS; DISSOCIATION; FILM GROWTH; MATHEMATICAL MODELS; PARAMETER ESTIMATION; PARTIAL PRESSURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES;

ELECTRON IMPACT DISSOCIATION;

THIN FILMS;

EID: 0034854639 PISSN: 11554339 EISSN: None Source Type: Conference Proceeding
DOI: 10.1051/jp4:2001390 Document Type: Conference Paper

Times cited : (3)

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