Enhancing the development rate model in optical lithography simulation of ultra-thick resist films for applications such as MEMS and LIGA

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4404, Issue , 2001, Pages 209-220

  Arthur, G ^a   Martin, B ^a  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

LIGA; Lithography simulation; MEMS; Parameter extraction; PROLITH 2; Ultra thick resist films

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; DISSOLUTION; MICROELECTROMECHANICAL DEVICES; PARAMETER ESTIMATION; THICK FILMS;

THICK RESIST FILMS;

PHOTORESISTS;

EID: 0034845736     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.425208     Document Type: Conference Paper

References (16)

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6. Theoretical basis for a new development rate model for positive photoresists
7. A new kinetic model to describe photoresist development
8. Lithography model tuning: Matching simulation to experiment
9. Methods for measurement of development parameters in the manufacturing line for use in photolithography modeling
10. A new development model for lithography simulation
11. Negative resist profiles of close-spaced parallel and isolated lines: Experimental modelling and simulation
12. Data analysis for photolithography