Theoretical basis for a new development rate model for positive photoresists

Journal of Photopolymer Science and Technology

Volumn 10, Issue 3, 1997, Pages 379-386

  Dammel, Ralph R ^a  

^a Hoechst Celanese Corporation   (United States)

Author keywords

AZ resist; Development parameters; Enhanced Mack model; Huang Reiser Kwei equation

Indexed keywords

EID: 0002638459     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.10.379     Document Type: Article

References (19)

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