Analysis of full wafer/full batch CD uniformity using electrical line width measurements

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4404, Issue , 2001, Pages 33-44

  Vanoppen, P ^a   Noordman, O ^a   Baselmans, J ^a   Van Schoot, J ^a  

^a ASML   (Netherlands)

Author keywords

ACLV; CD uniformity; Electrical line width measurement; Optical lithography

Indexed keywords

DATA ACQUISITION; MATHEMATICAL MODELS; POLYNOMIALS; SCANNING;

CRITICAL DIMENSION (CD) UNIFORMITY; ELECTRICAL LINE WIDTH MEASUREMENTS (ELM);

PHOTOLITHOGRAPHY;

EID: 0034845327     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.425226     Document Type: Conference Paper

References (9)

1. Can DUV take us below 100 nm?
2. Characterization of line width variation
3. Line width uniformity error analysis for step-and-scan systems
4. Qualifications of electrical line width measurements as a metrology tool for 0.18 μm and below
5. Electrical critical dimension metrology for 100-m line widths and below
6. Performance of a step and scan system for DUV lithography
7. The mask error factor: Causes and implications for process latitude
8. Reticle error correction for lithography tool qualification, benefits and limitations