Reticle error correction for lithography tool qualification benefits and limitations

Proceedings of SPIE- The International Society for Optical Engineering

Volumn 4186, Issue , 2001, Pages 217-226

  Kiers, T ^a   Mulder, M ^a   Van Schoot, J ^a   Waelpoel, J ^a   Uitz, R ^a  

^a ASML   (Netherlands)

Author keywords

ACLV; CD control; Mask Error Factor; Mask Metrology; Reticle Error Correction

Indexed keywords

ERROR CORRECTION; INTEGRATED CIRCUIT MANUFACTURE; LITHOGRAPHY;

ACROSS CHIP LINEWIDTH VARIATION (ACLV); CRITICAL DIMENSION (CD) CONTROL; RETICLE ERROR CORRECTION (REC);

MASKS;

EID: 0035043106     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.410696     Document Type: Article

References (5)

1. The mask error factor: Causes and implications for process latitude
2. Demonstrating next generation CD uniformity with today's tools and processes
3. Novel high-speed approach for CD uniformity mapping and monitoring
4. Lithographic comparison of assist feature design strategies