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Chemistry of Materials

Volumn 13, Issue 3, 2001, Pages 1061-1067

Composition profile of PLT films on YSZ-buffered (100)InP

(6) Vasco, E a Bohme O a Roman E a Zaldo, C a Kling, A b,c Da Silva, M F b,c

a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID (Spain)

b INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

c CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

LANTHANIDE; LEAD; TIN;

ARTICLE; CHEMICAL COMPOSITION; CRYSTALLIZATION; DATA ANALYSIS; FILM; PIEZOELECTRICITY; RADIATION SCATTERING; SEMICONDUCTOR; SIGNAL PROCESSING; THICKNESS;

EID: 0034840197 PISSN: 08974756 EISSN: None Source Type: Journal
DOI: 10.1021/cm001198p Document Type: Article

Times cited : (3)

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