Dielectric properties of (Pb, La)TiO3 thin films by multiple-cathode sputtering and its application to dynamic random access memory capacitors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 9 SUPPL. B, 1996, Pages 4976-4979

  Maiwa, Hiroshi ^a   Ichinose, Noboru ^b  

^a SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

^b WASEDA UNIVERSITY   (Japan)

Author keywords

(Pb, La)TiO3; Diffuse phase transition; DRAM; Ferroelectric thin films; Multiple cathode sputtering

Indexed keywords

DIFFUSE PHASE TRANSITION; FERROELECTRIC THIN FILM; MULTIPLE-CATHODE SPUTTERING;

DIELECTRIC PROPERTIES OF SOLIDS; EXPERIMENTS; FABRICATION; FERROELECTRIC MATERIALS; MAGNETRON SPUTTERING; PEROVSKITE;

THIN FILMS;

EID: 0030231477     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4976     Document Type: Article

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