A three-valued D-flip-flop and shift register using multiple-junction surface tunnel transistors

Proceedings of The International Symposium on Multiple-Valued Logic

Volumn , Issue , 2001, Pages 89-93

  Uemura, T ^a   Baba, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FLIP FLOP CIRCUITS; MOSFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SHIFT REGISTERS; SWITCHING CIRCUITS;

MULTIPLE-JUNCTION SURFACE TUNNEL TRANSISTORS (MJSTT);

LOGIC CIRCUITS;

EID: 0034835167     PISSN: 0195623X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Resonant tunneling device with multiple negative differential resistance: Digital and signal applications with reduced circuit complexity
2. Resonant tunneling diode and HEMT logic circuits with multiple threshold and multilevel output
3. Multiple-junction surface tunnel transistors for multiple-valued logic circuits
4. Development of InGaAs-based multiple-junction surface tunnel transistors for multiple-valued logic circuits
5. Development of quantum functional devices for multiple-valued logic circuits
6. Demonstration of a novel multiple-valued T-gate using multiple-junction surface tunnel transistors and its application to three-valued data flip-flop
7. Three-terminal silicon surface junction tunneling device for room temperature operation
8. Current-voltage characteristics of high current density silicon esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing