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Journal of Non-Crystalline Solids

Volumn 280, Issue 1-3, 2001, Pages 48-53

Ion-implanted treatment of (Ba, Sr)TiO3 films for DRAM applications

(7) Horng, R H a,d Wuu, D S b Kung, C Y a Lin, J C a Leu, C C c Haung, T Y c Sze, S M c

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

b DA YEH UNIVERSITY (Taiwan)

c NATIONAL NANO DEVICE LABORATORIES (Taiwan)

d NONE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CURRENT DENSITY; DYNAMIC RANDOM ACCESS STORAGE; ION IMPLANTATION; LEAKAGE CURRENTS; PERMITTIVITY; SOL-GELS; THIN FILMS; TITANIUM OXIDES;

LEAKAGE CURRENT DENSITY;

SURFACE TREATMENT;

EID: 0034833205 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(00)00353-7 Document Type: Article

Times cited : (2)

References (15)

1
- 0030191054
- H.N. Al-Shareef, X. Chen, D.J. Lichtenwalner, A.I. Kingon, Thin solid films 280 (1996) 265.
- (1996) Thin Solid Films , vol.280 , pp. 265
- Al-Shareef, H.N.¹ Chen, X.² Lichtenwalner, D.J.³ Kingon, A.I.⁴

2
- 0028101581
- P.C. Fazan, Integr. Ferroelectr. 4 (1994) 247.
- (1994) Integr. Ferroelectr. , vol.4 , pp. 247
- Fazan, P.C.¹

3
- 0031334253
- D.E. Kotecki, Integr. Ferroelectr. 16 (1997) 1.
- (1997) Integr. Ferroelectr. , vol.16 , pp. 1
- Kotecki, D.E.¹

4
- 0027990010
- L.D. Mcmillan, M. Huffman, T.L. Roberts, M.C. Scott, C.A. Paz, Integr. Ferroelectr. 4 (1994) 319.
- (1994) Integr. Ferroelectr. , vol.4 , pp. 319
- Mcmillan, L.D.¹ Huffman, M.² Roberts, T.L.³ Scott, M.C.⁴ Paz, C.A.⁵

5
- 0030688775
- D.S. Lee, D.Y. Park, M.H. Kim, D.I. Chun, J. Ha, E. Yoon, Mater. Res. Soc. Symp. Proc. 441 (1997) 341.
- (1997) Mater. Res. Soc. Symp. Proc. , vol.441 , pp. 341
- Lee, D.S.¹ Park, D.Y.² Kim, M.H.³ Chun, D.I.⁴ Ha, J.⁵ Yoon, E.⁶

6
- 0001524623
- H.J. Cho, S. Oh, C.S. Kang, C.S. Hwang, B.T. Lee, K.H. Lee, H. Horll, S.I. Lee, M.Y. Lee, Appl. Phys. Lett. 71 (1997) 3221.
- (1997) Appl. Phys. Lett. , vol.71 , pp. 3221
- Cho, H.J.¹ Oh, S.² Kang, C.S.³ Hwang, C.S.⁴ Lee, B.T.⁵ Lee, K.H.⁶ Horll, H.⁷ Lee, S.I.⁸ Lee, M.Y.⁹

7
- 0343197358
- 20p-ZC-8
- H. Watanabe, M. Hirase, K. Misawa, H. Mizuhara, M. Kizuki, H. Aoe, T. Geshi, A. Doi, Ext. Abs. 55th JSAP 20p-ZC-8 (1994) 661.
- (1994) Ext. Abs. 55th JSAP , pp. 661
- Watanabe, H.¹ Hirase, M.² Misawa, K.³ Mizuhara, H.⁴ Kizuki, M.⁵ Aoe, H.⁶ Geshi, T.⁷ Doi, A.⁸

8
- 0343570605
- H. Mizuhara, H. Watanabe, M. Hirase, K. Misawa, Y. Inoue, H. Aoe, Proceedings of IEEE VMIC 104 (1995) 90.
- (1995) Proceedings of IEEE VMIC , vol.104 , pp. 90
- Mizuhara, H.¹ Watanabe, H.² Hirase, M.³ Misawa, K.⁴ Inoue, Y.⁵ Aoe, H.⁶

9
- 0342700313
- L.J. Chen, S.T. Hsia, J.L. Leu, Proc. IEEE VMIC 103 (1994) 81.
- (1994) Proc. IEEE VMIC , vol.103 , pp. 81
- Chen, L.J.¹ Hsia, S.T.² Leu, J.L.³

10
- 0001094776
- C.S. Hwang, Mater. Sci. Eng. B 56 (1998) 178.
- (1998) Mater. Sci. Eng. B , vol.56 , pp. 178
- Hwang, C.S.¹

11
- 0031334253
- D.E. Kotecki, Integr. Ferroelectr. 16 (1997) 1.
- (1997) Integr. Ferroelectr. , vol.16 , pp. 1
- Kotecki, D.E.¹

12
- 0032025389
- R.H. Horng, D.S. Wuu, S.H. Chan, M.C. Chiang, T.Y. Huang, S.M. Sze, Jpn. J. Appl. Phys. 37 (1998) 885.
- (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 885
- Horng, R.H.¹ Wuu, D.S.² Chan, S.H.³ Chiang, M.C.⁴ Huang, T.Y.⁵ Sze, S.M.⁶

13
- 0033224235
- Y.F. Kuo, T.Y. Tseng, Mater. Chem. Phys. 61 (1999) 244.
- (1999) Mater. Chem. Phys. , vol.61 , pp. 244
- Kuo, Y.F.¹ Tseng, T.Y.²

14
- 36749120484
- M. Wohlecke, V. Marrello, A. Onton, J. Appl. Phys. 48 (1977) 1748.
- (1977) J. Appl. Phys. , vol.48 , pp. 1748
- Wohlecke, M.¹ Marrello, V.² Onton, A.³

15
- 0003679027
- McGraw-Hill International Editions
- S.M. Sze, VLSI Technology, 2nd Ed., McGraw-Hill International Editions, 1988.
- (1988) VLSI Technology, 2nd Ed.
- Sze, S.M.¹

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