Modeling the transfer characteristic and harmonic distortion effects in scanning capacitance microscopy measurements

Conference Record - IEEE Instrumentation and Measurement Technology Conference

Volumn 2, Issue , 2001, Pages 804-809

  Ciappa, M ^a   Stangoni, M ^a   Ciampolini, L ^a   Malberti, P ^a   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Dopant profiling; Harmonic distortion; Scanning capacitance microscopy

Indexed keywords

CAPACITANCE; FINITE ELEMENT METHOD; HARMONIC ANALYSIS; HARMONIC DISTORTION; MOS DEVICES; SIGNAL PROCESSING;

CAPACITANCE-VOLTAGE CHARACTERISTICS; DOPANT PROFILING; HARMONIC DISTORTION EFFECTS; SCANNING CAPACITANCE MICROSCOPY;

COMPUTER SIMULATION;

EID: 0034833092     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Status and review of 2D carrier profiling using SCM
2. SC spectroscopy: An analytical technique for PN junction delineation in Si devices
3. SCM measurement of two-dimensional dopant profiles across junctions
4. SCM for carrier profiling in semiconductors
5. +-p samples
6. Capacitive pickup and the buried subcarrier encoding system for the RCA VideoDisc
7. Scanning capacitance microscopy of silicon samples
8. ScaMsim, A new three-dimensional simulation tool for scanning capacitance microscopy