SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 299, Issue 1-2, 1997, Pages 178-182

Dependence of the C49-C54 TiSi2 phase transition temperature on film thickness and Si substrate orientation

(3) Jeon, Hyeongtag a Yoon, Gangjoong a Nemanich, R J b

a Hanyang University (South Korea)

b NORTH CAROLINA STATE UNIVERSITY (United States)

Author keywords

Phase transition; Silicon; Titanium silicide

Indexed keywords

CERAMIC COATINGS; PHASE TRANSITIONS; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; SILICON WAFERS; SURFACE STRUCTURE; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

FILM THICKNESS; PHASE TRANSITION TEMPERATURE; TITANIUM SILICIDES;

THIN FILMS;

EID: 0031130846 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(96)09042-6 Document Type: Article

Times cited : (41)

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