High power 4.6μm LEDs for CO detection grown by LPE

Electronics Letters

Volumn 35, Issue 19, 1999, Pages 1665-1667

  Krier, A ^a,b   Gao, H ^a   Sherstnev, V ^a   Yakovlev, Y ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON MONOXIDE; CHEMICAL SENSORS; LIQUID PHASE EPITAXY; OPTICAL SENSORS; PURIFICATION; RARE EARTH ELEMENTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

INDIUM ARSENIDE ANTIMONIDE; ION GETTERING;

LIGHT EMITTING DIODES;

EID: 0032644463     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991042     Document Type: Article

References (8)

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3. 0.44/InAs for HF detection', IEE Proc. Optoelectron., 1997, 144, pp. 355-359
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6. 2 at room temperature', to be published in J. Phys. D., Appl. Phys.
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8. GAO, H., KRIER, A., and SHERSTNEV, V.: 'High quality InAs grown by liquid phase epitaxy using gadolinium gettering', Semicond. Sci. Technol., 1999, 14, pp. 441-445