InAsSbP/lnAs LEDs for the 3.3-5.5 u m spectral range

IEE Proceedings: Optoelectronics

Volumn 145, Issue 5, 1998, Pages 254-256

  Matveev, B ^a   Zotova, N ^b   Karandashov, S ^a   Remennyi, M ^b   Ll'Inskaya, N ^b   Stus, N ^a   Shustoy, V ^b   Talalakin, G ^a   Malinen, J ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

Leds; Mid infrared applications; Optical detection

Indexed keywords

CARBON DIOXIDE; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; METHANE; NITROGEN OXIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS;

FULL WIDTH AT HALF MAXIMUM (FWHM);

LIGHT EMITTING DIODES;

EID: 0032180565     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19982303     Document Type: Article

References (14)

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