Calculations of the refractive index of AlGaN/GaN quantum well

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4283, Issue , 2001, Pages 630-637

  Djurisic A B ^a   Chan, Y ^a   Li, E H ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

AlxGa1 xN GaN quantum wells; Refractive index

Indexed keywords

ELECTRON TRANSITIONS; FINITE DIFFERENCE METHOD; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL CONDUCTIVITY;

DENSITY-MATRIX APPROACH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034774047     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.432616     Document Type: Conference Paper

References (16)

1. Widegap column-III nitride semiconductors for UV/blue light emitting devices
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3. Electronic states in semiconductor heterostructures
4. Optical properties of hexagonal GaN
5. Modeling the optical dielectric function of semiconductors: Extension of the critical-point parabolic-band approximation
6. Modeling the optical dielectric function of GaAs and AlAs: Extension of Adachi's model
7. 1-xN in the energy range 3-25 eV
8. 1-xN alloys
9. Exciton binding energies in GaN/AlGaN quantum well structures