The effect of varying barrier height on the operational characteristics of 1.3-μm strained-layer MQW lasers

IEEE Journal of Quantum Electronics

Volumn 34, Issue 12, 1998, Pages 2358-2363

  Hazell, J F ^a   Simmons, J G ^a   Evans, J D ^b   Blaauw, C ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b NORTEL NETWORKS   (Canada)

Author keywords

Charge carrier processes; Quantum wells; Quantum well lasers; Semiconductor device modeling; Semiconductor device testing; Semiconductor device thermal factors; Semiconductor superlattices; Semiconductor waveguides

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRON TUNNELING; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS;

ELECTRONIC CONFINEMENT; STRAINED LAYER RIDGE WAVEGUIDE LASERS; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0032292311     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.736107     Document Type: Article

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