Pitch dependence of linewidth in the 0.25 μm patterns fabricated using positive chemically amplified resist

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7632-7636

  Usujima, Akihiro ^a   Wada, Hajime ^a   Oikawa, Akira ^b   Kaimoto, Yuko ^b   Nakagawa, Kenji ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b NONE   (Japan)

Author keywords

Acid diffusion; Optical proximity effect; PEB condition; Positive chemically amplified resist; Proximity bias characteristic

Indexed keywords

DIFFUSION IN LIQUIDS; OPTICAL PROPERTIES; THERMAL EFFECTS; THICK FILMS;

CHEMICALLY AMPLIFIED RESISTS; OPTICAL PROXIMITY EFFECTS; POST EXPOSURE BAKE (PEB) CONDITION; PROXIMITY BIAS CHARACTERISTICS;

PHOTORESISTS;

EID: 0031356919     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7632     Document Type: Article

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