Minimum ion-beam exposure-dose determination for chemically amplified resist from printed dot matrices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 3119-3121

  Bruenger, W H ^a   Torkler, M ^a   Weiss, M ^a   Loschner H ^b   Leung, K ^c   Lee, Y ^c   Hudek, P ^d   Rangelow, I W ^e   Stangl, G ^f   Fallmann, W ^f  

^a FRAUNHOFER INSTITUTE FOR SILICON TECHNOLOGY ISIT   (Germany)

^b Ionen Mikrofabrikations Systeme GmbH   (Austria)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d INSTITUTE OF CHEMISTRY   (Slovakia)

^e UNIVERSITY OF KASSEL   (Germany)

^f UNIVERSITY OF VIENNA   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033275058     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590964     Document Type: Article

References (4)

1. W. H. Bruenger et al., Microelectron. Eng. 46, 477 (1999).
2. N. Rau, F. Stratton, Ch. Fields, T. Ogawa, A. Neureuther, R. Kubena, and G. Willson, J. Vac. Sci. Technol. B 16, 3784 (1998).
3. Y. Lee et al., J. Vac. Sci. Technol. B 16, 3367 (1998).
4. W. Henke and M. Torkler, J. Vac. Sci. Technol. B, these proceedings.