Chemically amplified deep ultraviolet resist for positive tone ion exposure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2355-2357

  Bruenger, W H ^a   Torkler, M ^a   Buchmann, L M ^a   Finkelstein, W ^b  

^a FRAUNHOFER INSTITUTE FOR SILICON TECHNOLOGY ISIT   (Germany)

^b Advanced Lithography Group   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000435558     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589645     Document Type: Article

References (4)

1. W. H. Bruenger, L.-M. Buchmann, M. Torkler, and S. Sinkwitz, J. Vac. Sci. Technol. B 14, 3924 (1996).
2. W. Canley, G. Breyta, B. Brunsvold, R. Dipietro, D. Hofer, S. Holmes, H. Ito, R. Nunes, G. Fichtl, P. Hagerty, and J. Thackeray, Proc. SPIE 2724, 34 (1996).
3. L.-M. Buchmann, U. Schnakenberg, M. Torkler, H. Löschner, G. Stengl, C. Traher, W. Fallmann, G. Stangl, and E. Cekan, I. Microelectromech. Systems 1, 116 (1992).
4. J. Thackeray, T. H. Fedynyshyn, D. Kang, M. M. Rajaratnam, G. Wallraff, I. Opitz, and D. Hofer, J. Vac. Sci. Technol. B 14, 4267 (1996).