Simulation of 193 nm photoresists based on different polymer platforms

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue II, 2001, Pages 936-944

  Kang, D ^a   Robertson, S ^a   Pavelchek, E ^a  

^a SHIPLEY COMPANY   (United States)

Author keywords

193 nm photoresists; Lithographic simulation; Methacrylate; Parameter extraction; Vinyl ether maleic anhydride

Indexed keywords

ALGORITHMS; CARBOXYLIC ACIDS; COMPUTER SOFTWARE; DIFFUSION; ORGANIC POLYMERS; PARAMETER ESTIMATION; RATE CONSTANTS;

PHOTOACID GENERATORS (PAG);

PHOTORESISTS;

EID: 0034758328     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436818     Document Type: Conference Paper

References (14)

1. 193 nm photoresists at 130 nm node: Which lithographic performances for which chemical platform?
2. Chemically amplified resists: Past, present, and future
3. Design and development of high performance 193 nm positive resist based on functionalized poly(cyclicolefins)
4. Design and synthesis of new photoresist materials for ArF lithography
5. Dissolution/swelling behavior of cycloolefin polymers in aqueous base
6. Physico-chemical properties of polymers for 193 nm lithography incorporating alicyclic norbornene-alt-maleic anhydride structures
7. Modeling chemically amplified resists for 193 nm lithography
8. Effects of polymer structure on dissolution characteristics in chemically amplified 193 nm resists
9. Characterization and modeling of a chemically amplified resist for ArF lithography
10. A new method for determining the optical properties of thin films by reflectometry
11. A simple method for measuring acid generation quantum efficiency at 193 nm
12. The accuracy of current model descriptions of a DUV photoresist
13. Effect of acid diffusion on performance in positive deep ultraviolet resists