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Volumn 450, Issue 2, 2000, Pages 297-306
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Comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics
a b c d e d f d a d a k c k g k h d k f more..
h
CERN
(Switzerland)
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRONIC EQUIPMENT;
ELECTRONIC EQUIPMENT MANUFACTURE;
ION BOMBARDMENT;
LIGHT MEASUREMENT;
MICROSTRIP DEVICES;
PROTONS;
READOUT SYSTEMS;
SEMICONDUCTOR DEVICES;
SILICON SENSORS;
SUBSTRATES;
THERMAL CONDUCTIVITY OF SOLIDS;
BINARY ELECTRONICS;
DETECTOR STRIP QUALITY;
LARGE HADRON COLLIDER;
SEMICONDUCTOR TRACKER;
SILICON MICROSTRIP DETECTOR;
PARTICLE DETECTORS;
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EID: 0034636905
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-9002(00)00259-X Document Type: Article |
Times cited : (11)
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References (14)
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