Noise studies of n-strip on n-bulk silicon microstrip detectors using fast binary readout electronics after irradiation to 3×1014 p cm-2

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 426, Issue 1, 1999, Pages 28-33

  Robinson, D ^a   Allport, P P ^c   Bizzell, J ^b   Buttar, C ^d   Carter, A A ^e   Carter, J R ^a   Goodrick, M ^a   Greenall, A ^c   Hill, J C ^a   Morgan, D ^d   Munday, D J ^a   Ohsugi, T ^g   Phillips, P W ^b   Riedler, P ^h   Smith, N A ^c   Terada, S ^f   Turner, P R ^c   Unno, Y ^f  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

^e QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^f HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^g HIROSHIMA UNIVERSITY   (Japan)

^h CERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; ELECTRIC POTENTIAL; MICROSTRIP DEVICES; RADIATION EFFECTS; READOUT SYSTEMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SPURIOUS SIGNAL NOISE;

MICRODISCHARGES; MICROSTRIP DETECTORS; SEMICONDUCTOR DETECTORS; STRIP NOISE MEASUREMENT;

RADIATION DETECTORS;

EID: 0032632287     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)01467-3     Document Type: Article

References (9)

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5. D. Morgan et al., Annealing study of irradiated prototype silicon microstrip detectors, ATLAS INDET-NO-199.
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