Photoluminescence and microstructure of the erbium-doped hydrogenated amorphous SiOx(0 < x < 2)

Chinese Physics Letters

Volumn 17, Issue 11, 2000, Pages 838-840

  Liang, Jian Jun ^a,b,c   Chen, Wei De ^a,b,c   Wang, Yong Qian ^a,b,c   He, Jie ^a,b,c   Zheng, Wei Min ^c   Wang, Zhan Guo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ERBIUM; MICROSTRUCTURE; OXYGEN; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SILICON COMPOUNDS;

ANNEALING TEMPERATURES; ERBIUM DOPED; OXYGEN CONTENT; QUENCHING EFFECT; SIO X; SIO X FILM; TEMPERATURE QUENCHING; VAPOR-DEPOSITION TECHNIQUES;

HYDROGENATION;

EID: 0034554932     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/17/11/021     Document Type: Article

References (19)

1. H. Enne, J. Schneider, G. Pomrenke and A. Axmann, Appl. Phys. Lett. 43 (1983) 943.
2. H. Ennen, G. Pomrenke, A. Axmann, K. Eiscle, W. Haydl and J. Schneider, Appl. Phys. Lett. 46 (1985) 381.
3. D. J. Eaglesham, J. Michel, E. A. Fitzgerald, D. C. Jacobson, J. M. Poate, J. L. Benton, A. Polman, Y.-H. Xie and L. C. Kimerling, Appl. Phys. Lett. 58 (1991) 2797.
4. G. Franzo and F. Priolo, S. Coffa, A. Polman and A. Carnera, Appl. Phys. Lett. 64 (1994) 2235.
5. J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y.-H. Xie, J. M. Poate and L. C. Kimerling, J. Appl. Phys. 70 (1991) 2672.
6. B. Zheng, J. Michel, F. Y. G. Ren and L. C. Kimerling, D. C. Jacobson and J. M. Poate, Appl. Phys. Lett. 64 (1994) 2842.
7. Akihito Taguchi and Kenichiro Takahei, J. Appl. Phys. 3 (1998) 2800.
8. P. N. Favennee, Electron. Lett. 25 (1989) 718.
9. W. D. Chen, J. J. Liang, C. C. Hsu, Mat. Res. Soc., Symp. Proc. 560 (1999) 107.
10. LEI Hong-Bing et al., Chin. Phys. Lett. 15 (1998) 72.
11. A. Polman, Jung H. Shin, R. Serna and G. N. Van Den Hoven, W. G. J. H. M. Van Sark and A. M. Vredenberg, S. Lombardo and S. U. Campisano, Mat. Res. Soc. Symp. Proc. 422 (1996) 239.
12. M. H. Brodsky, M. Cardona and J. J. Cuomo, Phys. Rev. B16 (1977) 3556.
13. A. A. Langford, M. L. Fleeet and B. P. Nelson, Phys. Rev. B45 (1992) 13367.
14. Sheng Suran, Ph.D. dissertation, Institute of Semiconductors, Chinese Academy of Sciences, 1997 (in Chinese).
15. K. J. Chang and D. J. Chadi, Phys. Rev. B42 (1990) 7651.
16. J. D. Holbech, B. B. Bielsen, R. Jones, P. Sitch and S. Oberg, Phys. Rev. Lett. 71 (1993) 875.
17. Zhixun Ma, Ph.D. dissertation, Institute of Semiconductors, Chinese Academy of Sciences, 1997 (in Chinese).
18. P. N. Favennee, H. L'Haridon, D. Moutonnet, M. Salvi and M. Gauneau, Jpn. J. Appl. Phys. 29 (1990) 524.
19. S. Coffer, G. Frano, F. Priolo, A. Polman and R. Serna, Phys. Rev. B 49 (1994) 163.