Erbium in Si: Estimation of energy transfer rate and trap depth from temperature dependence of intra-4f-shell luminescence

Journal of Applied Physics

Volumn 83, Issue 5, 1998, Pages 2800-2805

  Taguchi, Akihito ^a   Takahei, Kenichiro ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000418038     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367038     Document Type: Article

References (25)

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24. 0 value is about 7%-8% larger than that estimated from the exact expression.
25. The temperature dependence of the luminescence intensity has been reported by several groups (Refs. 3, 8, and 9) but most of them are in a narrower temperature range.