Luminescence quenching in erbium-doped hydrogenated amorphous silicon

Materials Research Society Symposium - Proceedings

Volumn 422, Issue , 1996, Pages 239-245

  Polman, A ^a   Shin, J H ^a   Serna, R ^a   Hoven, G N ^a   Sark, W G J H M ^a   Vredenberg, A M ^a   Lombardo, S ^a   Campisano, S U ^a  

^a FOM INSTITUTE AMOLF   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; HYDROGENATION; OXYGEN; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; QUENCHING; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON; THERMAL EFFECTS;

ERBIUM DOPED SILICON; HYDROGENATED AMORPHOUS SILICON; LUMINESCENCE QUENCHING;

ERBIUM;

EID: 0030398733     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-422-239     Document Type: Conference Paper

References (16)