The influence of oxygen content on photoluminescence from Er-doped SiOx

Materials Research Society Symposium - Proceedings

Volumn 560, Issue , 1999, Pages 107-111

  Chen, W D ^a   Liang, J J ^a   Hsu, C C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CRYSTAL MICROSTRUCTURE; DOPING (ADDITIVES); ERBIUM; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LASER APPLICATIONS; NITROGEN OXIDES; OXYGEN; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES;

ARGON LASER; LIGHT EMISSION EFFICIENCY; OPTOELECTRONIC INTEGRATED CIRCUITS; PHOTOLUMINESCENCE INTENSITY;

SILICON COMPOUNDS;

EID: 0033318559     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-560-107     Document Type: Article

References (4)

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