Photoluminescence from erbium-implanted silicon-rich SiO2

Chinese Physics Letters

Volumn 15, Issue 1, 1998, Pages 72-73

  Lei, Hong Bing ^a   Yang, Qin Qing ^a   Zhu, Jia Lian ^a   Gao, Jun Hua ^a   Wang, Hong Jie ^a   Wang, Qi Ming ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON LASERS; ERBIUM; LASER EXCITATION; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON OXIDES;

AR+ IONS; ION LASERS; ROOM TEMPERATURE LUMINESCENCE; SILICON RICH; SILICON SUBSTRATES;

SILICA;

EID: 0032369772     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/15/1/029     Document Type: Article

References (5)

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4. H. Ennen, G. Pomrenke, A. Axmann, W. Haydl and J. Schneider, Appl. Phys. Lett. 46 (1985) 381.
5. A. Polman, J. S. Custer, E. Snoeks and G. N. van den Hoven, Appl. Phys. Lett. 62 (1993) 507.