Defect generation during epitaxial CoSi2 formation using Co/Ti bilayer on oxide patterned (100)Si substrate and its effect on the electrical properties

Journal of the Electrochemical Society

Volumn 143, Issue 3, 1996, Pages

  Byun, Jeong Soo ^a   Seon, Jeong Min ^a   Youn, Kang Shik ^a   Hwang, Hyunsang ^a   Park, Jin Won ^a   Kim, Jae Jeong ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SILICA; TITANIUM;

COBALT SILICIDE; GATE OXIDES; LATERAL ENCROACHMENT; RAPID THERMAL ANNEALING; SELF ALIGNED FORMATION; VOIDS;

COBALT COMPOUNDS;

EID: 0030104534     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836531     Document Type: Article

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