Large grain polycrystalline silicon via chemical vapor deposition

Journal of Materials Research

Volumn 14, Issue 3, 1999, Pages 672-681

  Beckloff, Bruce N ^a   Lackey, W Jack ^b   Pickering, Elliott M ^a  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; DOPING (ADDITIVES); FILM GROWTH; GRAIN SIZE AND SHAPE; HYDROGEN; POLYCRYSTALLINE MATERIALS; STATISTICAL METHODS; SUBSTRATES; THERMAL EFFECTS; TITANIUM COMPOUNDS;

SILICON TETRACHLORIDE; TITANIUM BORIDE;

SILICON;

EID: 0033096924     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0092     Document Type: Article

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