메뉴 건너뛰기




Volumn 7, Issue 1, 1996, Pages 1-21

Carbon-impurity incorporation during the growth of epitaxial group III-V materials

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; EPITAXIAL GROWTH; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS; VACUUM; VAPOR PHASE EPITAXY;

EID: 0030084977     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00194087     Document Type: Article
Times cited : (10)

References (41)
  • 29
    • 26444438080 scopus 로고    scopus 로고
    • T. SUNTOLA and M. ANTSON, US Patent 4058 430 (1977)
    • T. SUNTOLA and M. ANTSON, US Patent 4058 430 (1977).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.