SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 168, Issue 1-4, 2000, Pages 312-315

Formation of silicon dioxide layers during UV annealing of tantalum pentoxide film

(2) Zhang, Jun Ying a Boyd, Ian W a

a UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; ETCHING; EXCIMER LASERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PERMITTIVITY; SILICA; TANTALUM COMPOUNDS; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

EXCIMER LAMPS; LOW TEMPERATURE ULTRAVIOLET ANNEALING; PHOTO-INDUCED CHEMICAL VAPOR DEPOSITION (PHOTO-CVD);

DIELECTRIC FILMS;

EID: 0034498076 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(00)00770-4 Document Type: Article

Times cited : (10)

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