Metal-oxide-semiconductor characteristics of tantalum oxide thin films grown by 172 nm radiation

Journal of Materials Science Letters

Volumn 17, Issue 17, 1998, Pages 1507-1509

  Zhang, Jun Ying ^a   Boyd, I W ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; LEAKAGE CURRENTS; MOS DEVICES; TANTALUM COMPOUNDS; THERMAL EFFECTS; THIN FILMS; ULTRAVIOLET RADIATION;

CAPACITANCE-VOLTAGE CHARACTERISTICS; FOWLER-NORDHEIM TUNNELING;

DIELECTRIC FILMS;

EID: 0032155981     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1026459309199     Document Type: Article

References (8)

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