Si twinning superlattice: Growth of new single crystal Si

Surface Review and Letters

Volumn 7, Issue 5-6, 2000, Pages 631-635

  Hibino, H ^a   Ogino, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

CONFERENCE PAPER; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; GROWTH; MEASUREMENT; OSCILLATION; SURFACE PROPERTY; TECHNIQUE; THERMOSTABILITY;

EID: 0034483316     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0218-625X(00)00060-9     Document Type: Conference Paper

References (11)