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Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 41-46

Growth process of twinned epitaxial layers on Si(111)√3 × √3-B and their thermal stability

(3) Hibino, H a Sumitomo, K a Ogino, T a

a NTT Basic Research Laboratories (Japan)

Author keywords

Boron; Epitaxial growth; Silicon; Twin

Indexed keywords

BORON; COALESCENCE; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; GRAIN BOUNDARIES; NUCLEATION; SURFACE STRUCTURE; THERMODYNAMIC STABILITY; TWINNING;

SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 4244016151 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(98)00022-1 Document Type: Article

Times cited : (7)

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