Formation of twinned two-bilayer-high islands during initial stages of Si growth on Si(111)√3 × √3-B

Surface Science

Volumn 412-413, Issue , 1998, Pages 132-140

  Hibino, H ^a   Ogino, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Boron; Epitaxy; Scanning tunneling microscopy; Silicon; Single crystal epitaxy

Indexed keywords

BORON; COMPOSITION EFFECTS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SUBSTRATES; SURFACE PHENOMENA; SURFACE STRUCTURE; TWINNING;

SURFACE RECONSTRUCTION;

SILICON;

EID: 0032167144     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00378-1     Document Type: Article

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