A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2000, Pages 185-188

  Mihaila, A ^a   Udrea, F ^a   Amaratunga, G ^a   Brezeanu, G ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; COMPUTER SOFTWARE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; HALL EFFECT; LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTOR DOPING; SILICON CARBIDE;

CHANNEL MOBILITY;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0034454776     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)