Liner-supported cylinder (LSC) technology to realize Ru/Ta2O5/Ru capacitor for future DRAMs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 793-

  Fukuzumi, Y ^a   Suzuki, T ^a   Sato, A ^a   Ishibashi, Y ^a   Hatada, A ^a   Nakamura, K ^a   Tsunoda, K ^a   Fukuda, M ^a   Lin, J ^a   Nakabayashi, M ^a   Minakata, H ^a   Shimada, A ^a   Kurahashi, T ^a   Tomita, H ^a   Matsunaga, D ^a   Hieda, K ^a   Hashimoto, K ^a   Nakamura, S ^a   Kohyama, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRODES; RUTHENIUM COMPOUNDS; TANTALUM COMPOUNDS;

CYLINDRICAL ELECTRODES; LINER SUPPORTED CYLINDER (LSC) TECHNOLOGY;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0034454473     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. 5 film capacitor with Ru bottom electrode
2. 5/CVD-TiN capacitor for multigigabit-scale DRAM generation
3. Highly reliable MIM capacitor technology using low pressure CVD-WN cylinder storage-node for 0.12um-scale embedded DRAM
4. 5/Ru capacitor technology for giga-scale DRAMs
5. 2-CMP
6. Level-specific strategy of KrF microlithography for 130nm DRAMs
7. A fully printable, self-aligned and planarized stacked capacitor DRAM cell technology for 1Gbit DRAM and beyond