SLURRY ENGINEERING FOR SELF-STOPPING, DISHING FREE SIO2-CMP

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 349-352

  Nojo, H ^a   Kodera, M ^a   Nakata, R ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CERIUM COMPOUNDS; POLISHING; SILICA; SURFACE ACTIVE AGENTS; SURFACES; THICKNESS CONTROL;

DESIGN LIMITATIONS; GLOBAL PLANARIZATIONS; MECHANICAL POLISHING; PLANARIZATION; POLISHING RATE;

SILICA; SLURRIES;

CERIUM OXIDE; CHEMICAL MECHANICAL POLISHING; PLANARIZATION;

EID: 0030387345     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553600     Document Type: Conference Paper

References (5)

1. Y.Hayashi et al., Proa, SSDM, 533 (1992).
2. H. Landis et al., Thin Solid Films. 220,1 (1992).
3. W. Lai et al., Proc. loth VMIC, 147 (1993).
4. Y. Hayashida et al., Proc. I2th VMIC. 464, (1995).
5. S. Sivaram et al.. Solid State Technol., 87 (1992).