Device and technology requirements for next generation communications systems (invited paper)

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 737-740

  Larson, L E ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; COMPUTER NETWORKS; DIGITAL COMMUNICATION SYSTEMS; MOBILE COMPUTING; SEMICONDUCTOR MATERIALS;

RADIO FREQUENCY DEVICES;

VLSI CIRCUITS;

EID: 0034453499     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Short Survey

References (13)

1. RF and system requirements for cable modem applications
2. A single-supply very high power and efficiency integrated PHEMT amplifier for GSM applications
3. A baseband to RF BiCMOS transmitter RFIC for dual-band CDMA/AMPS wireless handsets
4. Bluetooth radio architectures
5. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs
6. Analog circuit performance and process scaling
7. An assessment of state of the art 0.5 μm bulk CMOS technology for RF applications
8. Physical limitations on frequency and power parameters of transistors
9. A monolithic SiGe power amplifier for dual-mode (CDMA/AMPS) cellular handset applications
10. Micromachined microwave actuator technology: A new tuning approach for microwave integrated circuits
11. High-power microwave GaN/AlGaN HEMT on semi-insulating silicon carbide substrates