Single supply very high power and efficiency integrated PHEMT amplifier for GSM applications

Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2000, Pages 101-104

  Huin, F ^a   Duvanaud, C ^a   Serru, V ^a   Robin, F ^a   Leclerc, E ^a  

^a ACCO   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; MOBILE TELECOMMUNICATION SYSTEMS; MOLECULAR BEAM EPITAXY; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; POWER ADDED EFFICIENCY; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS;

POWER AMPLIFIERS;

EID: 0033684014     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)