Behavior of Ta thin film as a diffusion barrier in the Cu/barrier/SiO2 system

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4227, Issue , 2000, Pages 133-137

  Pan, J S ^a   Wee, A T S ^a   Huan, C H A ^a   Chai, J W ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

AES; Cu metallization; Diffusion barrier; Ta thin film; XPS; XRD

Indexed keywords

ADHESION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; COPPER; DIFFUSION COATINGS; INTERFACES (MATERIALS); METALLIZING; SCANNING ELECTRON MICROSCOPY; SILICA; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ADHESION-PROMOTING LAYERS; COPPER METALLIZATION; DIFFUSION BARRIERS;

TANTALUM;

EID: 0034452924     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.405381     Document Type: Conference Paper

References (18)