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Integrated Ferroelectrics

Volumn 31, Issue 1-4, 2000, Pages 163-171

Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devices

(6) Shin, H a Woo, J a Hong, S a Jeon, J U a Pak, Y E a No, K a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

Atomic force microscopy; Coercive field; Domains size; Electric field analysis; Ferroelectric films

Indexed keywords

ATOMIC FORCE MICROSCOPY; COERCIVE FORCE; ELECTRIC FIELD EFFECTS; ELECTRIC FIELD MEASUREMENT; ELECTRODES; FERROELECTRIC DEVICES; LEAD COMPOUNDS; MAGNETIC DOMAINS; NANOSTRUCTURED MATERIALS; THRESHOLD VOLTAGE;

ELECTRIC FIELD ANALYSIS; ELECTRIC FIELD DISTRIBUTION; FERROELECTRIC NANO DOMAINS; LEAD ZIRCONIUM TITANATE; SCANNING FORCE MICROSCOPY; ULTRAHIGH DENSITY MEMORY DEVICE;

THIN FILMS;

EID: 0034446041 PISSN: 10584587 EISSN: None Source Type: Journal
DOI: 10.1080/10584580008215650 Document Type: Conference Paper

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.