Dislocations produced by indentation deformation of HPVE GaN films

Materials Research Society Symposium - Proceedings

Volumn 622, Issue , 2000, Pages

  Hong, M H ^a   Pirouz, P ^a   Tavernier, P M ^a   Clarke, D R ^a  

^a Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); HARDNESS TESTING; INDENTATION; SAPPHIRE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HYDRIDE PHASE VAPOR EPITAXY (HVPE);

GALLIUM NITRIDE;

EID: 0034431257     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-622-t6.18.1     Document Type: Conference Paper

References (9)

1. Extended defects in SiC and GaN semiconductors