A beem study of PtSi schottky contacts on ion-milled Si

Materials Research Society Symposium - Proceedings

Volumn 564, Issue , 1999, Pages 201-206

  Ru, Guo Ping ^a   Detavernier, C ^b   Donaton, R A ^c   Blondeel, A ^b   Clauws, P ^b   Van Meirhaeghe, R L ^b   Cardon, F ^b   Maex, K ^c,d   Qu, Xin Ping ^a   Zhu, Shi Yang ^a   Li, Bing Zong ^a  

^a FUDAN UNIVERSITY   (China)

^b GHENT UNIVERSITY   (Belgium)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONTACTS; ELECTRON EMISSION; PLATINUM COMPOUNDS; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; SPUTTER DEPOSITION;

BALLISTIC ELECTRON EMISSION SPECTROSCOPY (BEEM); SCHOTTKY BARRIER HEIGHT (SBH); SCHOTTKY CONTACT;

SCHOTTKY BARRIER DIODES;

EID: 0033279428     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-564-201     Document Type: Article

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