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Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 423-428

Cadmium-related defects in silicon: Electron-paramagnetic-resonance identification

(4) Gehlhoff, W a Naser A a Lang, M b Pensl, G b

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

Diffusion; DLTS; Double acceptor; EPR; Si:Cd

Indexed keywords

CADMIUM; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL SYMMETRY; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; PARAMAGNETIC RESONANCE; SPECTRUM ANALYSIS;

DOUBLE ACCEPTORS;

SEMICONDUCTING SILICON;

EID: 0031337507 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.258-263.423 Document Type: Article

Times cited : (4)

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