Implantation of As in GaN epitaxial layers during molecular-beam epitaxy

Semiconductors

Volumn 30, Issue 3, 1996, Pages 293-296

  Ber, B Ya ^a   Merkulov, A V ^a   Novikov, S V ^a   Tret'yakov, V V ^a   Cheng, T S ^b   Foxon, C T ^b   Jenkins, L C ^b   Hooper, S E ^b   Lacklison, D E ^b   Orton, J W ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343453978     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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7. C. T. Foxon, T. S. Cheng, S. V. Novikov, D. E. Lacklison, L. C. Jenkins, D. Johnston, J. W. Orton, S. E. Hooper, N. Baba-Ali, T. S. Tansley, and V. V. Tret'yakov, J. Cryst. Growth 150, 892 (1995).
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