Characterization of in situ phosphorus-doped polycrystalline silicon films grown by disilane-based low-pressure chemical vapor deposition

Journal of the Electrochemical Society

Volumn 144, Issue 11, 1997, Pages 3952-3958

  Grahn, J V ^a   Pejnefors, J ^a   Sanden M ^a   Zhang, S L ^a   Ostling M ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC PROPERTIES; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILANES; SUBSTITUTION REACTIONS;

DISILANE; DOPANT SEGREGATION; FURNACE ANNEALING; STRUCTURAL PROPERTIES;

SEMICONDUCTING FILMS;

EID: 0031269196     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838117     Document Type: Article

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