Refined continuum model on the behavior of intergranular films in silicon nitride ceramics

Journal of the American Ceramic Society

Volumn 83, Issue 11, 2000, Pages 2821-2827

  Choi, Heon Jin ^a   Kim, Gyeung Ho ^a   Lee, June Gunn ^a   Kim, Young Wook ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b University of Seoul   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH (CHEMICAL); CERAMIC MATERIALS; CONCRETE ADDITIVES; CONTINUUM MECHANICS; HOT PRESSING; MATHEMATICAL MODELS; VAN DER WAALS FORCES;

INTERGRANULAR GLASSY FILMS (IGF);

SILICON NITRIDE;

EID: 0034321906     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2000.tb01638.x     Document Type: Article

References (34)

1. D. R. Clarke and G. Thomas, "Grain Boundary Phase in a Hot-Pressed MgO Fluxed Silicon Nitride," J. Am. Ceram. Soc., 60 [11-12] 491-95 (1977).
2. 4," J. Am. Ceram. Soc., 61 [9-10] 392-96 (1978).
3. O. L. Krivanek, T. M. Shaw, and G. Thomas, "The Microstructure and Distribution of Impurities in Hot-Pressed and Sintered Silicon Nitrides," J. Am. Ceram. Soc., 62 [11-12] 585-90 (1979).
4. I. Tanaka, H.-J. Kleebe, M. K. Cinibulk, J. Bruley, D. R. Clarke, and M. Rühle, "Calcium Concentration Dependence of the Intergranular Film Thickness in Silicon Nitride," J. Am. Ceram. Soc., 77 [4] 911-14 (1994).
5. M. K. Cinibulk, H.-J. Kleebe, G. A. Schneider, and M. Rühle, "Amorphous Intergranular Films in Silicon Nitride Ceramics Quenched from High Temperature," J. Am. Ceram. Soc., 76 [11] 2801-808 (1993).
6. 3-Fluxed Sintered Silicon Nitride," J. Mater. Sci., 28, 3529-38 (1993).
7. Y.-M. Chiang, L. A. Silverman, R. H. French, and R. M. Cannon, "Thin Glass Film between Ultrafine Conductor Particles in Thick-Film Resistor," J. Am. Ceram. Soc., 77 [5] 1143-52 (1994).
8. H.-J. Kleebe, W. Braue, H. Schmidt, G. Pezzolti, and G. Ziegler, "Transmission Electron Microscopy of Microstructures in Ceramic Materials," J. Eur. Ceram. Soc., 16, 339-51 (1996).
9. C. M. Wang, X. Pan, M. J. Hoffman, R. M. Cannon, and M. Rühle, "Grain Boundary Films in Rare-Earth-Glass-Based Silicon Nitride," J. Am. Ceram. Soc., 79 [3] 788-92 (1996).
10. X. Pan, H. Gu, R. Weeren, S. C. Danforth, R. M. Cannon, and M. Rühle, "Grain-Boundary Microstructure and Chemistry of a Hot Isostatically High-Purity Silicon Nitride," J. Am. Ceram. Soc., 79 [9] 2313-20 (1996).
11. H. Wang and Y.-M. Chiang, "Thermodynamic Stability of Intergranular Amorphous Films in Bismuth-Doped Zinc Oxide," J. Am. Ceram. Soc., 81 [1] 89-96 (1998).
12. 4 Ceramics Studied by Transmission Electron Microscopy," J. Ceram. Soc. Jpn., 105 [6] 453-75 (1997).
13. I. Tanaka, K. Igashira, H.-J. Kleebe, and M. Rühle, "High-Temperature Strength of Fluorine-Doped Silicon Nitride," J. Am. Ceram. Soc., 77 [1] 275-77 (1994).
14. C. M. Wang, M. Mitomo, T. Nishimura, and Y. Bando, "Grain Boundary Film Thickness in Superplastically Deformed Silicon Nitride," J. Am. Ceram. Soc., 80 [5] 1213-21 (1997).
15. P. Burger, R. Duclos, and J. Crampon, "Microstructure Characterization in Superplastically Deformed Silicon Nitride," J. Am. Ceram. Soc., 80 [4] 879-85 (1997).
16. D. R. Clarke, "On the Equilibrium Thickness of Intergranular Glass Phases in Ceramic Materials," J. Am. Ceram. Soc., 70 [1] 15-22 (1987).
17. M. K. Cinibulk, H.-J. Kleebe, and M. Rühle, "Quantitative Comparison of TEM Techniques for Determining Amorphous Intergranular Film Thickness," J. Am. Ceram. Soc., 76 [2] 426-32 (1993).
18. 3 Pseudoternary System," J. Am. Ceram. Soc., 60 [5-6] 249-52 (1977).
19. 4 Material: Phase Relations in the System Si-Sc-O-N and Preliminary Property Studies," J. Am. Ceram. Soc., 64 [4] C-77-C-78 (1981).
20. M. K. Cinibulk, G. Thomas, and S. M. Johnson, "Fabrication and Secondary-Crystallization of Rare-Earth Disilicate-Silicon Nitride Ceramics," J. Am. Ceram. Soc., 75 [8] 2037-43 (1992).
21. H. J. Choi, J. G. Lee, and Y.-W. Kim, "High Temperature Strength and Oxidation Behaviour of Hot-Pressed Silicon Nitride-Disilicate Ceramics," J. Mater. Sci., 32, 1937-42 (1997).
22. I-W. Chen and S. L. Hwang, "Shear Thickening Creep in Superplastic Silicon Nitride," J. Am. Ceram. Soc., 75 [5] 1073-79 (1992).
23. J. E. Shelby and J. T. Kohli, "Rare-Earth Aluminosilicate Glass," J. Am. Ceram. Soc., 73 [1] 39-42 (1990).
24. M. Ohashi, K. Nakamura, K. Hirao, S. Kanzaki, and S. Hampshire, "Formation and Properties of Ln-Si-O-N Glasses (Ln = Lanthanides or Y)," J. Am. Ceram. Soc., 78 [1] 71-76 (1995).
25. E. Zhang, K. Liddell, and D. P. Thomson, "Glass Forming Regions and Thermal Expansion of Some Ln-Si-Al-O-N Glasses (Ln = La, Nd)," Br. Ceram. Trans., 95 [4] 169-72 (1996).
26. R. Ramesh, F. Nester, M. J. Pomeroy, and S. Hampshire, "Formation of Ln-Si-Al-O-N Glasses and Their Properties," J. Eur. Ceram. Soc., 17, 1993-39 (1997).
27. A. Dietzel, "The Cation Field Strengths and Their Relation to Devitrifying Process to Compound Formation and to the Melting Points of Silicates," Z. Elektrochem., 48, 9-23 (1942).
28. W. D. Kingery, H. K. Bowen, and D. R. Uhlmann, Introduction to Ceramics. Wiley-Interscience, New York, 1976.
29. S. Hampshire, R. A. L. Drew, and K. H. Jack, "Oxynitride Glasses," Phys. Chem. Glasses, 26 [5] 182-86 (1985).
30. R. H. French, H. Müllejans, D. J. Jones, G. Duscher, R. M. Cannon, and M. Rühle, "Dispersion Forces and Hamaker Constants for Intergranular Films in Silicon Nitride from Spatially Resolved-Valence Electron Energy Loss Spectrum Imaging," Acta Mater., 46 [7] 2271-87 (1998).
31. M. K. Cinibulk, G. Thomas, and S. M. Johnson, "Strength and Creep Behavior of Rare-Earth Disilicate-Silicon Nitride Ceramics," J. Am. Ceram. Soc., 75 [8] 2050-55 (1992).
32. M. Bobeth, D. R. Clarke, and W. Pompe, "A Diffusive Interface Description of Intergranular Films in Polycrystalline Ceramics," J. Am. Ceram. Soc., 82 [6] 1537-46 (1999).
33. R. D. Shannon, "Revised Effective Ionic Radii and Systematic Studies of Interatomic Distances in Halides and Chalcogenides," Acta Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor., Gen. Crystallogr., A32, 751-67 (1976).
34. E. A. Taft, "Characterization of Silicon Nitride Films," J. Electrochem. Soc., 118 [8] 1341-45 (1971).